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| Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Feature * P-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 -30 4 -80 P- TO220 -3-1 V m A * Enhancement mode * Logic Level * Automotive AEC Q101 qualified * Green package (lead free) * MSL1 up to 260C peak reflow temperature * 175C operating temperature * Avalanche rated * dv/dt rated Type IPP80P03P3L-04 IPB80P03P3L-04 IPI80P03P3L-04 Package Ordering Code Drain pin 2 Marking 3P03L04 3P03L04 3P03L04 Value -80 -80 Gate pin1 Source pin 3 P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 - Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25C TC=100C Unit A ID Pulsed drain current TC=25C I D puls EAS dv/dt VGS Ptot T j , T stg -320 432 -6 20 200 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID=-80 A , VDD=-25V, RGS=25 Reverse diode dv/dt IS=-80A, VDS=-24V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA Values typ. 0.5 max. 0.75 62 62 40 Unit - K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, ID=-250A Symbol min. V(BR)DSS VGS(th) I DSS Values typ. -1.5 max. -2 Unit -30 -1 V Gate threshold voltage, VGS = VDS ID=-430A Zero gate voltage drain current V DS=-30V, VGS=0, Tj=25C V DS=-30V, VGS=0, Tj=150C3) A -0.1 -10 10 -1 -100 100 nA Gate-source leakage current V GS=20V, VDS =0 I GSS RDS(on) - Drain-source on-state resistance 4) V GS=-4.5V, ID =-50A V GS=-4.5V, ID =-50A, SMD version m 6.3 6 3.5 3.2 7.6 7.3 4.3 4 Drain-source on-state resistance 4) V GS=-10V, I D=-80A V GS=-10V, I D=-80A, SMD version RDS(on) - 1Current limited by bondwire ; with an R thJC = 0.75K/W the chip is able to carry ID= 171A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air; t 10 sec. 3Defined by design. Not subject to production test. 4Diagrams are related to straight lead versions Page 2 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Symbol Conditions min. Values typ. 125 7720 2050 1673 30 45 200 180 max. 45 68 300 270 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2ID RDS(on)max , 63 ID=-80A V GS=0, VDS =-25V, f=1MHz S pF - V DD=-15V, VGS=-10V, ID=-1A, RG=6 ns Qgs Qgd Qg VDD =-24V, ID =-80A - -25 -85 -200 -3 -38 -128 -300 - nC VDD =-24V, ID =-80A, VGS =0 to -10V V(plateau) VDD =-24V, ID =-80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0, |IF| = |ID| VR =-15V, |IF| = |lD|, diF/dt=100A/s IS TA=25C - -1.1 60 75 -80 -320 -1.3 75 95 A V ns nC Page 3 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BIPP80P03P3L-04, BIPB80P03P3L-04 and BIPI80P03P3L-04, for simplicity the device is referred to by the term IPP80P03P3L-04, IPB80P03P3L-04 and IPI80P03P3L-04 throughout this documentation Page 4 2004-03-04 |
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